bsc077n12ns3gatma1

Introducing the BSC077N12NS3GATMA1, a high-performance power MOSFET designed to meet the demands of various industrial and automotive applications. This N-channel MOSFET is part of Infineon's OptiMOS™ 5 1200V series, known for its low on-state resistance and excellent switching performance. With a maximum drain-source voltage of 1200V and a continuous drain current of 77A, the BSC077N12NS3GATMA1 delivers superior power efficiency and robustness for power electronics designs. Its advanced technology and robust package make it suitable for high-power applications such as motor control, solar inverters, welding equipment, and more. This power MOSFET also features integrated ESD protection, ensuring reliable operation and durability in challenging environments. Its optimized parasitic inductance and low switching losses contribute to improved system efficiency and reduced power dissipation. In summary, the BSC077N12NS3GATMA1 MOSFET from Infineon offers a winning combination of high performance, reliability, and efficiency, making it the preferred choice for demanding power electronic designs.