Click to send email
Introducing the Bss138lt1g, a breakthrough in transistor technology. This high performance, low voltage N-Channel MOSFET is designed to meet the demands of today's electronic devices. With its compact size and outstanding electrical properties, the Bss138lt1g is the perfect choice for applications requiring efficient power management. Featuring a drain-source voltage of up to 50V and a continuous drain current of 200mA, this transistor delivers reliable performance in a wide range of operating conditions. Its low on-resistance and fast switching speed ensure minimal power loss and reduced heat generation, making it ideal for battery-powered devices, such as smartphones, tablets, and wearable technology. Furthermore, the Bss138lt1g is housed in a small SOT-23 package, allowing for easy integration on PCBs with limited space. Its industry-leading quality and reliability ensure long-lasting performance, making it suitable for demanding environments. Upgrade your designs with the Bss138lt1g and experience enhanced power management capabilities. This transistor is the perfect solution for designers who seek efficiency, reliability, and space optimization.
Please send RFQ , we will respond immediately.