epc2212

Introducing the EPC2212, a high-performance enhancement-mode gallium nitride (GaN) power transistor designed for wireless power transfer, multi-level power conversion, envelope tracking, and renewable energy applications. This 200 V, 73 mΩ, chip-scale-packaged eGaN FET features a 50 A pulsed, 7 A continuous drain current and 20 MHz switching speeds. With its high efficiency, small size, and low on-resistance, the EPC2212 offers an excellent solution to improve power density and system performance in various power electronics applications. The EPC2212 also supports high frequency operation, enabling compact and efficient power conversion designs. This product provides designers with a superior option for high-speed, high-power switching applications where size and performance are critical. Save board space, reduce power losses, and simplify thermal management with the EPC2212 GaN power transistor.