ipn60r3k4ceatma1

Introducing the IPN60R3K4CEATMA1, a powerful and efficient MOSFET designed for a wide range of applications including industrial, automotive, and power supply systems. This product features a low on-state resistance of 3.3mΩ, allowing for reduced power loss and improved thermal performance. With a maximum drain current of 60A and a 650V voltage rating, the IPN60R3K4CEATMA1 offers a high level of reliability and robustness. This MOSFET also incorporates advanced technology to minimize switching losses and improve overall efficiency, making it an ideal choice for high-performance power management solutions. Additionally, it is designed to operate at high temperatures and has a high avalanche energy capability, making it suitable for demanding and rugged applications. The IPN60R3K4CEATMA1 is housed in a TO-220 package, providing ease of use and flexibility for various mounting configurations. With its outstanding electrical and thermal performance, this MOSFET is a top choice for designers and engineers looking to optimize their power control designs.