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The IRF510 is a high-power N-channel MOSFET designed for high-voltage, high-power applications. It is ideal for use in a wide range of applications including amplifier, switching, and motor control circuits. The IRF510 features a low On resistance and a high input impedance, making it suitable for high-current and high-speed switching applications. With a maximum drain-source voltage of 100V and a continuous drain current of 5.6A, the IRF510 is capable of handling high-power loads with ease. Its TO-220 package ensures efficient heat dissipation, allowing for continuous high-power operation. The pinout of the IRF510 consists of three terminals: the gate (G), the drain (D), and the source (S). The gate terminal is used to control the flow of current between the drain and source terminals, making it well-suited for both analog and digital applications. Overall, the IRF510 is a versatile and reliable N-channel MOSFET suitable for a wide range of high-power applications.
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