mmbt5089lt1g

Introducing the MMBT5089LT1G, a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This SOT-23 packaged transistor features a low saturation voltage and high current gain, making it an ideal choice for a wide range of electronic designs. With a maximum collector current of 600mA and a power dissipation of 350mW, the MMBT5089LT1G provides reliable and efficient performance in compact and cost-effective circuits. This transistor is also RoHS-compliant, ensuring environmental sustainability and safety. Whether you're designing audio amplifiers, signal processing circuits, or voltage regulators, the MMBT5089LT1G offers the versatility and reliability you need to bring your electronic applications to life. Its small form factor and high performance make it suitable for a wide range of space-constrained designs. Trust the MMBT5089LT1G to deliver consistent and dependable performance in your next electronic design project.