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Image | Name | Manufacturer | Package / Case | Description | Package | Quantity | Price($) | Database | Aibosi Part |
---|---|---|---|---|---|---|---|---|---|
CIGT252010LMR24MNE | Samsung Electro-Mechanics | 240 nH Unshielded Thin Film Inductor 6 A 16mOhm Max 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.13 | ABS13-CIGT252010LMR24MNE | ||||
CIGW252012GL4R7MNE | Samsung Electro-Mechanics | 4.7 µH Drum Core, Wirewound Inductor 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.18 | ABS13-CIGW252012GL4R7MNE | ||||
CIGT252012LM1R0MNE | Samsung Electro-Mechanics | 1 µH Unshielded Thin Film Inductor 3.4 A 40mOhm Max 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIGT252012LM1R0MNE | ||||
CIGT252012LMR68MNE | Samsung Electro-Mechanics | 680 nH Unshielded Thin Film Inductor 3.56 A 33mOhm Max 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIGT252012LMR68MNE | ||||
CIGW404012GM4R7MLE | Samsung Electro-Mechanics | 4.7 µH Drum Core, Wirewound Inductor.. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIGW404012GM4R7MLE | ||||
CIG22B1R0MAE | Samsung Electro-Mechanics | 1 µH Shielded Multilayer Inductor 1.3 A 110mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22B1R0MAE | ||||
CIG22B2R2MAE | Samsung Electro-Mechanics | 2.2 µH Shielded Multilayer Inductor 1.1 A 190mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22B2R2MAE | ||||
CIG22B3R3MAE | Samsung Electro-Mechanics | 3.3 µH Shielded Multilayer Inductor 1 A 220mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22B3R3MAE | ||||
CIG22BR47MAE | Samsung Electro-Mechanics | 470 nH Shielded Multilayer Inductor 1.6 A 80mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22BR47MAE | ||||
CIG22BR47MNE | Samsung Electro-Mechanics | 470 nH Shielded Multilayer Inductor 1.6 A 65.5mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22BR47MNE | ||||
CIG22BR56MAE | Samsung Electro-Mechanics | 560 nH Shielded Multilayer Inductor 1.4 A 100mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22BR56MAE | ||||
CIG22E1R0SNE | Samsung Electro-Mechanics | 1 µH Inductor.. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22E1R0SNE | ||||
CIG22E2R2MNE | Samsung Electro-Mechanics | 2.2 µH Shielded Multilayer Inductor 1.3 A 150mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22E2R2MNE | ||||
CIG22ER47MNE | Samsung Electro-Mechanics | 470 nH Shielded Multilayer Inductor 3.2 A 36mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22ER47MNE | ||||
CIG22H3R3MAE | Samsung Electro-Mechanics | 3.3 µH Shielded Multilayer Inductor 1.1 A 138mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22H3R3MAE | ||||
CIG22HR56MAE | Samsung Electro-Mechanics | 560 nH Shielded Multilayer Inductor 2 A 55mOhm 1008 (2520 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIG22HR56MAE | ||||
CIGT201206EH1R0MNE | Samsung Electro-Mechanics | 1 µH Unshielded Thin Film Inductor 1.8 A 110mOhm Max 0805 (2012 Metric).. |
Min: 1 Mult: 1 |
$0.00 | ABS13-CIGT201206EH1R0MNE | ||||
CIGT201208EHR47MNE | Samsung Electro-Mechanics | 470 nH Unshielded Thin Film Inductor 3.7 A 35mOhm Max 0805 (2012 Metric).. |
Min: 1 Mult: 1 |
$0.16 | ABS13-CIGT201208EHR47MNE | ||||
MCFE1608TR24MG | Taiyo Yuden | 240 nH Shielded Multilayer Inductor 2.6 A 100mOhm Max 0603 (1608 Metric).. |
Min: 1 Mult: 1 |
$0.20 | ABS13-MCFE1608TR24MG | ||||
MCHK2012TR47M | Taiyo Yuden | 470 nH Shielded Multilayer Inductor 3.21 A 36mOhm Max 0805 (2012 Metric).. |
Min: 1 Mult: 1 |
$0.20 | ABS13-MCHK2012TR47M | ||||
MCKK2012TR24M | Taiyo Yuden | 240 nH Shielded Multilayer Inductor 6.2 A 25mOhm Max 0805 (2012 Metric).. |
Min: 1 Mult: 1 |
$0.20 | ABS13-MCKK2012TR24M | ||||
NRV3012T100MV | Taiyo Yuden | 10 µH Shielded Drum Core, Wirewound Inductor 640 mA 470mOhm Nonstandard.. |
Min: 1 Mult: 1 |
$0.28 | ABS13-NRV3012T100MV | ||||
NRV3012T1R5NV | Taiyo Yuden | 1.5 µH Shielded Drum Core, Wirewound Inductor 1.61 A 75mOhm Nonstandard.. |
Min: 1 Mult: 1 |
$0.28 | ABS13-NRV3012T1R5NV | ||||
NRV3012T2R2MV | Taiyo Yuden | 2.2 µH Shielded Drum Core, Wirewound Inductor 1.1 A 144mOhm Max Nonstandard.. |
Min: 1 Mult: 1 |
$0.28 | ABS13-NRV3012T2R2MV | ||||
NRV3012T6R8MV | Taiyo Yuden | 6.8 µH Shielded Drum Core, Wirewound Inductor 800 mA 300mOhm Nonstandard.. |
Min: 1 Mult: 1 |
$0.28 | ABS13-NRV3012T6R8MV | ||||
B78108E1151M009 | EPCOS - TDK Electronics | 150 nH Unshielded Drum Core, Wirewound Inductor 6.5 A 17mOhm Max Axial.. |
Min: 1 Mult: 1 |
$0.21 | ABS13-B78108E1151M009 | ||||
B78108E1152K009 | EPCOS - TDK Electronics | 1.5 µH Unshielded Drum Core, Wirewound Inductor 3.8 A 47mOhm Max Axial.. |
Min: 1 Mult: 1 |
$0.21 | ABS13-B78108E1152K009 | ||||
B78108E1153K009 | EPCOS - TDK Electronics | 15 µH Unshielded Drum Core, Wirewound Inductor 1.6 A 230mOhm Max Axial.. |
Min: 1 Mult: 1 |
$0.22 | ABS13-B78108E1153K009 | ||||
B78108E1221M009 | EPCOS - TDK Electronics | 220 nH Unshielded Drum Core, Wirewound Inductor 5.9 A 19mOhm Max Axial.. |
Min: 1 Mult: 1 |
$0.21 | ABS13-B78108E1221M009 | ||||
B78108E1331M009 | EPCOS - TDK Electronics | 330 nH Unshielded Drum Core, Wirewound Inductor 5.3 A 23mOhm Max Axial.. |
Min: 1 Mult: 1 |
$0.18 | ABS13-B78108E1331M009 |
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