Goford Semiconductor GT080N10T

GT080N10T

Manufacturer: Goford Semiconductor
AIBOSI NO: GT080N10T
Package: TO-220-3
Datasheet:
Stock: 63600000
Description: N-Channel 100 V 70A (Tc) 100W (Tc) Through Hole TO-220
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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Goford Semiconductor
Series	GT
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2257 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
Standard Package	50