Goford Semiconductor GT042P06T

GT042P06T

Manufacturer: Goford Semiconductor
AIBOSI NO: GT042P06T
Package: TO-220-3
Datasheet:
Stock: 47030000
Description: P-Channel 60 V 160A (Tc) 280W (Tc) Through Hole TO-220
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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	305 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9151 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	280W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	50
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active