Transphorm TP65H050G4WS

TP65H050G4WS

Manufacturer: Transphorm
AIBOSI NO: TP65H050G4WS
Package: TO-247-3
Datasheet:
Stock: 4690000
Description: N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Price: $7.54

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Unit Price: $7.5350

Ext Price: $7.5350

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Please send RFQ , we will respond immediately.

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	TP65H050
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1707-TP65H050G4WS
Standard Package	30
Mfr	Transphorm
Series	SuperGaN®
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	119W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole