Toshiba Semiconductor and Storage RN2103,LF(CT

RN2103,LF(CT


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: RN2103,LF(CT
  • Package: SC-75, SOT-416
  • Datasheet:
  • Stock: 30000
  • Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
  • Price: $0.11

Quantity:

Unit Price: $0.1050

Ext Price: $0.1050

In Stock

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SPECIFICATIONS

Parameters
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 100 mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
Base Product Number RN2103
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM

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