STMicroelectronics SGSD100

SGSD100


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: SGSD100
  • Package: TO-247-3
  • Datasheet:
  • Stock: 44960000
  • Description: Bipolar (BJT) Transistor NPN - Darlington 80 V 25 A 130 W Through Hole TO-247-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr STMicroelectronics
Series -
Package Tube
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 25 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10A, 3V
Power - Max 130 W
Frequency - Transition -
Operating Temperature -
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number SGSD100
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Bipolar (BJT) Transistor NPN - Darlington 80 V 25 A 130 W Through Hole TO-247-3

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