Toshiba Semiconductor and Storage TK1K0A60F,S4X

TK1K0A60F,S4X

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK1K0A60F,S4X
Package: TO-220-3 Full Pack
Datasheet:
Stock: 680000
Description: N-Channel 600 V 7.5A (Ta) 40W (Tc) Through Hole TO-220SIS
Price: $0.56

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Unit Price: $0.5550

Ext Price: $0.5550

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 3.8A, 10V
Vgs(th) (Max) @ Id	4V @ 770µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK1K0A60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50