Toshiba Semiconductor and Storage TK6R7A10PL,S4X

TK6R7A10PL,S4X


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TK6R7A10PL,S4X
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 43490000
  • Description: N-Channel 100 V 56A (Tc) 42W (Tc) Through Hole TO-220SIS
  • Price: $0.76

Quantity:

Unit Price: $0.7600

Ext Price: $0.7600

In Stock

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3455 pF @ 50 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature 175°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK6R7A10
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 100 V 56A (Tc) 42W (Tc) Through Hole TO-220SIS

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