NXP USA Inc. PBSS4140S,126

PBSS4140S,126


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: PBSS4140S,126
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Datasheet:
  • Stock: 38200000
  • Description: Bipolar (BJT) Transistor NPN 40 V 1 A 150MHz 830 mW Through Hole TO-92-3
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series -
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V
Power - Max 830 mW
Frequency - Transition 150MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number PBSS4
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000
Bipolar (BJT) Transistor NPN 40 V 1 A 150MHz 830 mW Through Hole TO-92-3

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