NXP USA Inc. PDTB123YS,126

PDTB123YS,126

Manufacturer: NXP USA Inc.
AIBOSI NO: PDTB123YS,126
Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
Stock: 40200000
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3
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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Tape & Box (TB)
Product Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Power - Max	500 mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Base Product Number	PDTB123
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	2,000