Fairchild Semiconductor FDP13AN06A0_NL

FDP13AN06A0_NL


  • Manufacturer: Fairchild Semiconductor
  • AIBOSI NO: FDP13AN06A0_NL
  • Package: TO-220-3
  • Datasheet:
  • Stock: 11410000
  • Description: N-Channel 60 V 10.9A (Ta), 62A (Tc) 115W (Tc) Through Hole TO-220-3
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
N-Channel 60 V 10.9A (Ta), 62A (Tc) 115W (Tc) Through Hole TO-220-3

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In Stock

Please send RFQ , we will respond immediately.