Infineon Technologies BCR 129 E6327

BCR 129 E6327


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: BCR 129 E6327
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet:
  • Stock: 10000000
  • Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23-3-11
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 150 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11
Base Product Number BCR 129
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 8,362
Mfr Infineon Technologies
Series -
Package Bulk
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23-3-11

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