Infineon Technologies SPD02N60C3

SPD02N60C3


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: SPD02N60C3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 89390000
  • Description: N-Channel 600 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-11
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 6
N-Channel 600 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-11

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