NXP USA Inc. 2N5551,412

2N5551,412


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: 2N5551,412
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Datasheet:
  • Stock: 71650000
  • Description: Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series -
Package Tube
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 630 mW
Frequency - Transition 300MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number 2N55
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 1,000
Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3

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