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NXP USA Inc. BC638,112
BC638,112
- Manufacturer: NXP USA Inc.
- AIBOSI NO: BC638,112
- Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
- Stock: 57330000
- Description: Bipolar (BJT) Transistor PNP 60 V 1 A 100MHz 830 mW Through Hole TO-92-3
- Price:
In Stock
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Shipping Cost
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example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Power - Max | 830 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | BC63 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 1,000 |
Bipolar (BJT) Transistor PNP 60 V 1 A 100MHz 830 mW Through Hole TO-92-3
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