Infineon Technologies BCR 166F E6327

BCR 166F E6327


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: BCR 166F E6327
  • Package: SOT-723
  • Datasheet:
  • Stock: 14470000
  • Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 160 MHz 250 mW Surface Mount PG-TSFP-3
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 160 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package PG-TSFP-3
Base Product Number BCR 166
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 160 MHz 250 mW Surface Mount PG-TSFP-3

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