Infineon Technologies IPS09N03LB G

IPS09N03LB G


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPS09N03LB G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet:
  • Stock: 89020000
  • Description: N-Channel 30 V 50A (Tc) 58W (Tc) Through Hole PG-TO251-3-11
  • Price:

Quantity:

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 15 V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number IPS09N
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
N-Channel 30 V 50A (Tc) 58W (Tc) Through Hole PG-TO251-3-11

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In Stock

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