Infineon Technologies IRF6641TR1PBF

IRF6641TR1PBF


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRF6641TR1PBF
  • Package: DirectFET™ Isometric MZ
  • Datasheet:
  • Stock: 73770000
  • Description: N-Channel 200 V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MZ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 200 V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ

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In Stock

Please send RFQ , we will respond immediately.