Fairchild Semiconductor FQI4N80TU

FQI4N80TU


  • Manufacturer: Fairchild Semiconductor
  • AIBOSI NO: FQI4N80TU
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Datasheet:
  • Stock: 20000
  • Description: N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262)
  • Price: $0.53

Quantity:

Unit Price: $0.5250

Ext Price: $0.5250

In Stock

Please send RFQ , we will respond immediately.

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Fairchild Semiconductor
Series QFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN EAR99
HTSUS 8542.39.0001
Standard Package 1
N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262)

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