NXP USA Inc. PHB110NQ08T,118

PHB110NQ08T,118


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: PHB110NQ08T,118
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Datasheet:
  • Stock: 7500000
  • Description: N-Channel 75 V 75A (Tc) 230W (Tc) Surface Mount D2PAK
  • Price: $0.52

Quantity:

Unit Price: $0.5200

Ext Price: $0.5200

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series TrenchMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 113.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4860 pF @ 25 V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 290
N-Channel 75 V 75A (Tc) 230W (Tc) Surface Mount D2PAK

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