Infineon Technologies IPP126N10N3G

IPP126N10N3G


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPP126N10N3G
  • Package: TO-220-3
  • Datasheet:
  • Stock: 75090000
  • Description: N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO220-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Rds On (Max) @ Id, Vgs 12.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 68
N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO220-3

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In Stock

Please send RFQ , we will respond immediately.