STMicroelectronics SCTL35N65G2V

SCTL35N65G2V


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: SCTL35N65G2V
  • Package: 8-PowerVDFN
  • Datasheet:
  • Stock: 23310000
  • Description: N-Channel 650 V 40A (Tc) 417W (Tc) Surface Mount PowerFlat™ (8x8) HV
  • Price: $10.54

Quantity:

Unit Price: $10.5400

Ext Price: $10.5400

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SPECIFICATIONS

Parameters
Mfr STMicroelectronics
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN
Base Product Number SCTL35
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-SCTL35N65G2VTR
Standard Package 3,000
N-Channel 650 V 40A (Tc) 417W (Tc) Surface Mount PowerFlat™ (8x8) HV

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In Stock

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