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Vishay Siliconix SIHD5N80AE-GE3
SIHD5N80AE-GE3
- Manufacturer: Vishay Siliconix
- AIBOSI NO: SIHD5N80AE-GE3
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 10000
- Description: N-Channel 800 V 4.4A (Tc) 62.5W (Tc) Surface Mount TO-252AA
- Price: $0.55
Unit Price: $0.5450
Ext Price: $0.5450
In Stock
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 321 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 742-SIHD5N80AE-GE3 |
| Standard Package | 3,000 |
N-Channel 800 V 4.4A (Tc) 62.5W (Tc) Surface Mount TO-252AA
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