Toshiba Semiconductor and Storage TK7R0E08QM,S1X

TK7R0E08QM,S1X

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK7R0E08QM,S1X
Package: TO-220-3
Datasheet:
Stock: 1720000
Description: N-Channel 80 V 64A (Tc) 87W (Tc) Through Hole TO-220
Price: $0.73

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Unit Price: $0.7250

Ext Price: $0.7250

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	87W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50