onsemi BC517ZL1G

BC517ZL1G


  • Manufacturer: onsemi
  • AIBOSI NO: BC517ZL1G
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Datasheet:
  • Stock: 21860000
  • Description: Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
HTSUS 8541.21.0075
Standard Package 2,000
Mfr onsemi
Series -
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA, 2V
Power - Max 625 mW
Frequency - Transition 200MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92 (TO-226)
Base Product Number BC517
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)

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