onsemi BC637G

BC637G


  • Manufacturer: onsemi
  • AIBOSI NO: BC637G
  • Package: TO-226-3, TO-92-3 Long Body
  • Datasheet: -
  • Stock: 25780000
  • Description: Bipolar (BJT) Transistor NPN 60 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
  • Price:

Quantity:

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr onsemi
Series -
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Power - Max 625 mW
Frequency - Transition 200MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92 (TO-226)
Base Product Number BC637
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 5,000
Bipolar (BJT) Transistor NPN 60 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)

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