Toshiba Semiconductor and Storage RN1112,LXHF(CT

RN1112,LXHF(CT

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN1112,LXHF(CT
Package: SC-75, SOT-416
Datasheet:
Stock: 60000
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Price: $0.03

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Unit Price: $0.0312

Ext Price: $0.0312

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250 MHz
Power - Max	100 mW
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SSM
Base Product Number	RN1112
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000