Rohm Semiconductor R6511ENXC7G

R6511ENXC7G


  • Manufacturer: Rohm Semiconductor
  • AIBOSI NO: R6511ENXC7G
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 10000
  • Description: N-Channel 650 V 11A (Ta) 53W (Tc) Through Hole TO-220FM
  • Price: $1.65

Quantity:

Unit Price: $1.6450

Ext Price: $1.6450

In Stock

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
FET Feature -
Power Dissipation (Max) 53W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
Base Product Number R6511
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6511ENXC7G
Standard Package 50
N-Channel 650 V 11A (Ta) 53W (Tc) Through Hole TO-220FM

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In Stock

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