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Microchip Technology MSC025SMA330B4
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| Parameters | |
|---|---|
| Mfr | Microchip Technology |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 3300 V |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.7V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 410 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8720 pF @ 2640 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Base Product Number | MSC025 |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 150-MSC025SMA330B4 |
| Standard Package | 1 |
N-Channel 3300 V 104A (Tc) Through Hole TO-247-4
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