Infineon Technologies IMW120R014M1HXKSA1

IMW120R014M1HXKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IMW120R014M1HXKSA1
  • Package: TO-247-3
  • Datasheet:
  • Stock: 1110000
  • Description: N-Channel 1200 V 127A (Tc) 455W (Tc) Through Hole PG-TO247-3
  • Price: $23.94

Quantity:

Unit Price: $23.9350

Ext Price: $23.9350

In Stock

Please send RFQ , we will respond immediately.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 18.4mOhm @ 54.3A, 18V
Vgs(th) (Max) @ Id 5.2V @ 23.4mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 18 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 4580 nF @ 25 V
FET Feature -
Power Dissipation (Max) 455W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 1200 V 127A (Tc) 455W (Tc) Through Hole PG-TO247-3

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In Stock

Please send RFQ , we will respond immediately.