Rohm Semiconductor SCT3017ALGC11

SCT3017ALGC11


  • Manufacturer: Rohm Semiconductor
  • AIBOSI NO: SCT3017ALGC11
  • Package: TO-247-3
  • Datasheet:
  • Stock: 17680000
  • Description: N-Channel 650 V 118A (Tc) 427W Through Hole TO-247N
  • Price: $58.42

Quantity:

Unit Price: $58.4200

Ext Price: $58.4200

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 22.1mOhm @ 47A, 18V
Vgs(th) (Max) @ Id 5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2884 pF @ 500 V
FET Feature -
Power Dissipation (Max) 427W
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3017
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-SCT3017ALGC11
Standard Package 30
N-Channel 650 V 118A (Tc) 427W Through Hole TO-247N

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