Toshiba Semiconductor and Storage TDTA124E,LM

TDTA124E,LM


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TDTA124E,LM
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet:
  • Stock: 30000
  • Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3
  • Price: $0.09

Quantity:

Unit Price: $0.0900

Ext Price: $0.0900

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 320 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Base Product Number TDTA124
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3

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