Rohm Semiconductor EMF7T2R

EMF7T2R

Manufacturer: Rohm Semiconductor
AIBOSI NO: EMF7T2R
Package: SOT-563, SOT-666
Datasheet: -
Stock: 85170000
Description: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6
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SPECIFICATIONS

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max)	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V, 12V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 20mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)	500nA, 100nA (ICBO)
Frequency - Transition	250MHz, 320MHz
Power - Max	150mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	EMT6
Base Product Number	EMF7
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
Other Names	846-EMF7T2RTR
Standard Package	8,000