Infineon Technologies IRF6614TR1PBF

IRF6614TR1PBF

Manufacturer: Infineon Technologies
AIBOSI NO: IRF6614TR1PBF
Package: DirectFET™ Isometric ST
Datasheet:
Stock: 18660000
Description: N-Channel 40 V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2560 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ ST
Package / Case	DirectFET™ Isometric ST
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000