Goford Semiconductor GT025N06AM6

GT025N06AM6


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: GT025N06AM6
  • Package: TO-263-7, D²Pak (6 Leads + Tab)
  • Datasheet: -
  • Stock: 87830000
  • Description: N-Channel 60 V 170A (Tc) 215W (Tc) Surface Mount TO263-6
  • Price: $0.66

Quantity:

Unit Price: $0.6615

Ext Price: $0.6615

In Stock

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5058 pF @ 30 V
FET Feature -
Power Dissipation (Max) 215W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO263-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
RoHS Status RoHS Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Other Names 3141-GT025N06AM6TR
Standard Package 800
N-Channel 60 V 170A (Tc) 215W (Tc) Surface Mount TO263-6

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