Microsemi Corporation APTGT35H120T1G

APTGT35H120T1G


  • Manufacturer: Microsemi Corporation
  • AIBOSI NO: APTGT35H120T1G
  • Package: SP1
  • Datasheet:
  • Stock: 49580000
  • Description: IGBT Module Trench Field Stop Full Bridge Inverter 1200 V 55 A 208 W Chassis Mount SP1
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Microsemi Corporation
Series -
Package Bulk
Product Status Obsolete
IGBT Type Trench Field Stop
Configuration Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 55 A
Power - Max 208 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Current - Collector Cutoff (Max) 250 µA
Input Capacitance (Cies) @ Vce 2.5 nF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
IGBT Module Trench Field Stop Full Bridge Inverter 1200 V 55 A 208 W Chassis Mount SP1

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