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Taiwan Semiconductor Corporation TSM60NC620CI C0G
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| Parameters | |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 506 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ITO-220 |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | TSM60 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Other Names | 1801-TSM60NC620CIC0G |
| Standard Package | 4,000 |
N-Channel 600 V 7A (Tc) 46W (Tc) Through Hole ITO-220
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