Toshiba Semiconductor and Storage TK70D06J1(Q)

TK70D06J1(Q)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TK70D06J1(Q)
Package: TO-220-3
Datasheet:
Stock: 39920000
Description: N-Channel 60 V 70A (Ta) 45W (Tc) Through Hole TO-220(W)
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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	70A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5450 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220(W)
Package / Case	TO-220-3
Base Product Number	TK70
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50