Toshiba Semiconductor and Storage TPC8110(TE12L,Q,M)

TPC8110(TE12L,Q,M)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TPC8110(TE12L,Q,M)
Package: 8-SOIC (0.173", 4.40mm Width)
Datasheet:
Stock: 69190000
Description: P-Channel 40 V 8A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIII
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2180 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)
Base Product Number	TPC8110
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000