Toshiba Semiconductor and Storage 2SC2705-Y(TE6,F,M)

2SC2705-Y(TE6,F,M)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: 2SC2705-Y(TE6,F,M)
Package: TO-226-3, TO-92-3 Long Body
Datasheet:
Stock: 32900000
Description: Bipolar (BJT) Transistor NPN 150 V 50 mA 200MHz 800 mW Through Hole TO-92MOD
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Box (TB)
Product Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	50 mA
Voltage - Collector Emitter Breakdown (Max)	150 V
Vce Saturation (Max) @ Ib, Ic	1V @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10mA, 5V
Power - Max	800 mW
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92MOD
Base Product Number	2SC2705
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Standard Package	3,000