Toshiba Semiconductor and Storage GT30J121(Q)

GT30J121(Q)


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: GT30J121(Q)
  • Package: TO-3P-3, SC-65-3
  • Datasheet:
  • Stock: 40000
  • Description: IGBT 600 V 30 A 170 W Through Hole TO-3P(N)
  • Price: $1.67

Quantity:

Unit Price: $1.6650

Ext Price: $1.6650

In Stock

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Power - Max 170 W
Switching Energy 1mJ (on), 800µJ (off)
Input Type Standard
Td (on/off) @ 25°C 90ns/300ns
Test Condition 300V, 30A, 24Ohm, 15V
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Base Product Number GT30J121
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
IGBT 600 V 30 A 170 W Through Hole TO-3P(N)

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