Infineon Technologies IPP052N06L3GXKSA1

IPP052N06L3GXKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPP052N06L3GXKSA1
  • Package: TO-220-3
  • Datasheet:
  • Stock: 68140000
  • Description: N-Channel 60 V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3
  • Price: $0.79

Quantity:

Unit Price: $0.7850

Ext Price: $0.7850

In Stock

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 30 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP052
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 60 V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3

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In Stock

Please send RFQ , we will respond immediately.