Infineon Technologies IMZA120R030M1HXKSA1

IMZA120R030M1HXKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IMZA120R030M1HXKSA1
  • Package: TO-247-4
  • Datasheet:
  • Stock: 91580000
  • Description: N-Channel 1200 V 70A (Tc) 273W (Tc) Through Hole PG-TO247-4-U02
  • Price: $10.71

Quantity:

Unit Price: $10.7102

Ext Price: $10.7102

In Stock

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 40.9mOhm @ 25.6A, 18V
Vgs(th) (Max) @ Id 5.2V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 18 V
Vgs (Max) +20V, -7V
Input Capacitance (Ciss) (Max) @ Vds 2160 pF @ 800 V
FET Feature -
Power Dissipation (Max) 273W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-U02
Package / Case TO-247-4
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 1200 V 70A (Tc) 273W (Tc) Through Hole PG-TO247-4-U02

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In Stock

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