Toshiba Semiconductor and Storage RN1422TE85LF

RN1422TE85LF

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN1422TE85LF
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 60000
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 800 mA 300 MHz 200 mW Surface Mount S-Mini
Price: $0.21

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Unit Price: $0.2100

Ext Price: $0.2100

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	65 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	300 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Base Product Number	RN1422
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Standard Package	3,000